We report the dispersion characteristics of ScAlN/GaN high-electron-mobility transistors (HEMTs) with various epitaxial designs. Devices were fabricated on both ternary (ScAlN) and quaternary (ScAlGaN) materials. The effects of a GaN capping layer was also investigated. We report similar DC and RF performance for all wafers, but significantly worse dispersion which occurs on the quaternary samples. We observe a total gate and drain lag for the ScAlN wafer to be 49% while the ScAlGaN with and without the GaN cap had 10 and 12% dispersion, respectively.
Dispersion Characteristics of ScAlN and ScAlGaN HEMTs by Pulsed I-V MeasurementsKelson Chabak, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USACathy Lee, Qorvo Inc.Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEAndy Xie, QorvoEdward Beam, QORVOAntonio Crespo, AFRLDennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USARobert Fitch, AFRLJames Gillespie, Air Force Research LaboratoryAndrew Green, Air Force Research LaboratoryDownload Paper
16.5 Epitaxial Lift-Off from Native GaN Substrates Using Photoenhanced Wet EtchingChris Youtsey, MicroLink Devices, Inc.Robert McCarthy, MicroLink DevicesRekha Reddy, MicroLink DevicesAndy Xie, QorvoEd Beam, QorvoJingshan Wang, Notre DamePatrick Fay, University of Notre DameEric Carlson, Virginia TechLou Guido, Virginia Tech