Annaliese Drechsler

Northrop Grumman (MS), Linthicum, MD

100nm, Three-dimensional T-Gate for SLCFET Amplifiers

Robert Howell, Northrop Grumman Corporation

Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD

Ken Nagamatsu, Northrop Grumman Corporation

Kevin Frey, Northrop Grumman Corporation

Monique Farrell, Northrop Grumman Corporation

Georges Siddiqi, HRL Laboratories

M. Scimonelli, Northrop Grumman (MS), Linthicum, MD

Jordan Merkle, Northrop Grumman Corporation

Josephine Chang, Northrop Grumman Corporation

This report describes the first demonstration of a 100nm T-gate for the Superlattice Castellation Field Effect Transistor (SLCFET) amplifier. The SLCFET amplifier device utilizes a superlattice of GaN/AlGaN channels, which enables a high charge density and low source resistance. A three-dimensional T-gate structure provides electrostatic control of the channels while maintaining high gain. Improvements to the T-gate process have allowed for the scaling of the gate down to 100nm while maintaining excellent gate control, with an on to off current ratio exceeding 10⁷. This gate scaling allows the device to reach F_T / F_MAX of 70/110 GHz with full passivation to maintain compatibility with the productionized SLCFET switch process.

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May 11, 2022 // 5:10pm

11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology

Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD

R. Lewis, Northrop Grumman (MS), Linthicum, MD

J. Mason, Northrop Grumman (MS), Linthicum, MD

M. Scimonelli, Northrop Grumman (MS), Linthicum, MD

M. Snook, Northrop Grumman (MS), Linthicum, MD

J. Parke, Northrop Grumman (MS), Linthicum, MD

K. Renaldo, Northrop Grumman (MS), Linthicum, MD

M. Lee, Northrop Grumman (MS), Linthicum, MD

Robert Howell, Northrop Grumman Corporation

I. Wathuthanthri, Northrop Grumman (MS), Linthicum, MD

J. Daubert, Northrop Grumman (MS), Linthicum, MD

J. Kelliher, Northrop Grumman (MS), Linthicum, MD

N. Edwards, Northrop Grumman (MS), Linthicum, MD

B. Alt, Northrop Grumman (MS), Linthicum, MD

J.T. Mlack, Northrop Grumman (MS), Linthicum, MD

A. Marrakchi El Fellah, Northrop Grumman (MS), Linthicum, MD

B. Novak, Northrop Grumman (MS), Linthicum, MD

J. Hong, Northrup GrumNorthrop Grumman (MS), Linthicum, MD

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Annaliese Drechsler

100nm, Three-dimensional T-Gate for SLCFET Amplifiers

11.3 Reliability without Hermeticity (RWoH) Protection for SLCFET Switch Technology