Antonio Crespo

Air Force Research Laboratory, Sensors Directorate

  • Dispersion Characteristics of ScAlN and ScAlGaN HEMTs by Pulsed I-V Measurements

    Kelson Chabak., Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Cathy Lee, Qorvo Inc.
    Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    Andy Xie, Qorvo
    Edward Beam, QORVO
    Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
    Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Robert Fitch, AFRL
    James Gillespie, Air Force Research Laboratory
    Andrew Green, Air Force Research Laboratory, Sensors Directorate

    We report the dispersion characteristics of ScAlN/GaN high-electron-mobility transistors (HEMTs) with various epitaxial designs. Devices were fabricated on both ternary (ScAlN) and quaternary (ScAlGaN) materials. The effects of a GaN capping layer was also investigated. We report similar DC and RF performance for all wafers, but significantly worse dispersion which occurs on the quaternary samples. We observe a total gate and drain lag for the ScAlN wafer to be 49% while the ScAlGaN with and without the GaN cap had 10 and 12% dispersion, respectively.

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  • 14.4 Device Development of Gallium Oxide MOSFETs Grown by MOVPE on Native Substrates for High-Voltage Applications

    Neil Moser A., Air Force Research Laboratory, Sensors Directorate, Wright-Patterson AFB, OH,
    Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
    Andrew Green, Air Force Research Laboratory, Sensors Directorate
    Dennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USA
    Stephen Tetlak, AFRL
    Eric Heller, AFRL
    Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
    Robert Fitch, AFRL
    Jonathan McCandless, AFRL
    Kevin Leedy, Air Force Research Laboratory, Sensors Directorate
    Michele Baldini, Leibniz-Institut für Kristallzüchtung
    Guenter Wagner, Leibniz-Institut für Kristallzüchtung
    Glen Via, AFRL
    John Blevins, Air Force Research Laboratory (AFRL), Wright-Patterson AFB, OH
    Gregg Jessen, AFRL
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  • 3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC Process

    James Gillespie, Air Force Research Laboratory
    Kelson Chabak, Air Force Research Laboratory, Sensors Directorate
    Antonio Crespo, Air Force Research Laboratory, Sensors Directorate
    Robert Fitch, AFRL
    Darren Ferwalt, Cobham Advanced Electronic Systems
    David Frey, Cobham Advanced Electronic Systems
    Jeremy Gassmann, Cobham Advanced Electronic Systems
    Mark Walker, Cobham Advanced Electronic Solutions
    Ryan Gilbert, Wyle Laboratories
    Dennis Walker Jr, Air Force Research Laboatory, Sensors Directorate
    Glen Via, AFRL
    A.J. Green
    K.D. Leedy
    R.K. Mongia
    B.S. Poling
    K.A. Sutherlin
    S.E. Tetlak
    J.P. Theimer
    G.H. Jessen
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