B. Jones

Swansea University
  • May 12, 2022 // 3:20pm

    18.13 Rounded Base Corners in SiC Trenches for Power MOSFETs

    Kevin Riddell, SPTS, Newport, UK
    A. Croot, KLA Corporation (SPTS Division)
    C. Bolton, SPTS, Newport, UK
    B. Jones, Swansea University
    F. Monaghan, Swansea University, Swansea, UK
    J. Mitchell, KLA Corporation (SPTS Division)
    M. R. Jennings, Swansea University, Swansea, UK
    O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),

    [embeddoc url=”https://csmantech.org/wp-content/uploads/2023/09/18.13.2022-Rounded-base-corners-in-SiC-trenches-for-power-MOSFETs.pdf” download=”all”]

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  • 3.1.4.2024 Plasma Dicing for High Yield SiC Singulation

    A. Croot, KLA Corporation (SPTS Division)
    B. Jones, Swansea University
    J. Mitchell, KLA Corporation (SPTS Division)
    Huma Ashraf, KLA Corporation (SPTS Division)
    M Jennings, Swansea University
    Janet Hopkins, KLA Corporation (SPTS Division)
    O. J. Guy, Centre for Integrative Semiconductor Materials (CISM),

    [embeddoc url=”https://csmantech.org/wp-content/uploads/2024/06/3.1.4.2024-Plasma-Dicing-for-High-Yield-SiC-Singulation.pdf” download=”all”]