Barry Wu

Keysight Technologies, Inc.
  • A Study of Low-Annealing-Temperature Ohmic Contact on n-Type GaN Layers

    Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
    Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
    Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
    Theeradetch Detchprohm, Georgia Tech
    Russell Dupuis, Georgia Tech
    Barry Wu, Keysight Technologies, Inc.
    Don D’Avanzo, Keysight Technologies, Inc.

    Typical n-type ohmic contact formation for GaN material systems requires high-temperature thermal processes. The high-temperature process often leads to a rough surface after the annealing step. Low-annealing-ohmic contact is advantageous to prevent undesired surface roughening on the metal stack during this thermal process.  We report an approach to achieve low contact resistance on n-type GaN layers using a nitrogen plasma and a conventional Ti/Al-based metal stacks.  We observed an as-deposit ohmic contact behavior on the n-type contact with a specific contact resistance (rc,sp) in the mid-E-6 Ω∙cm2 range.  The rc,sp was further reduced to  6.8E-7 Ω∙cm2 after an annealing step at 600 oC.

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  • May 10, 2022 // 4:30pm

    5.2 GaAsSb/InP DHBT Extrinsic Base Regrowth Using In-situ Hydrogen Plasma Surface Treatment and Molecular Beam Epitaxy

    Barry Wu, Keysight Technologies, Inc.
    Martin Dvorak, Keysight Technologies, Inc.
    Forest Huang, Keysight Technologies, Inc.
    Scott LaFrancois, Keysight Technologies, Inc.
    Mathias Bonse, Keysight Technologies, Inc.
    Evan Lobisser, Keysight Technologies, Inc.
    Masaya Iwamoto, Keysight Technologies, Inc.
    Ben Zaks, Keysight Technologies, Inc.

    Abstract

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