Bing Sun
Institute of Microelectronics, Chinese Academy of Sciences
-
5.2 High Performance InGaAs MOSFETs with an InGaP Interface Control Layer and ALD-Al2O3 Gate Oxide for RF Switch Applications
Download PaperQingzhen Xia, Institute of Microelectronics, Chinese Academy of SciencesKailiang Huang, Institute of Microelectronics, Chinese Academy of SciencesHudong Chang, Institute of Microelectronics, Chinese Academy of SciencesShengkai Wang, Institute of Microelectronics, Chinese Academy of SciencesBing Sun, Institute of Microelectronics, Chinese Academy of SciencesHonggang Liu, Institute of Microelectronics, Chinese Academy of Sciences