Bo Zhang

University of Electronic Science and Technology of China
  • May 02, 2019 // 3:40pm – 4:30pm

    18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

    Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
    Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
    Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
    Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
    Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
    Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
    Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
    Bo Zhang, University of Electronic Science and Technology of China
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  • 4.4 Improved Uniformity on E-mode GaN-on-Si MIS-HEMTs Fabrication by High-Temperature Gate Recess Technique

    Jinhan Zhang, University of Electronic Science and Technology of China
    Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
    Xuanwu Kang, Institute of Microelectronics, Chinese Academy of Sciences
    Xinhua Wang, Institute of Microelectronics, Chinese Academy of Sciences
    Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
    Yijun Shi, University of Electronic Science and Technology of China
    Qi Zhou, University of Electronic Science and Technology of China
    Wanjun Chen, University of Electronic Science and Technology of China
    Bo Zhang, University of Electronic Science and Technology of China
    Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
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