C. Chen

Momentive Technologies

  • Device Characteristics Analysis of GaAs/InGaP HBT Power Cells Using Conventional Through Wafer Via Process and Copper Pillar Bump Process

    Hsiu-Chen Chang
    Shu-Hsiao Tsai, WIN Semiconductors Corp
    Cheng-Kuo Lin, WIN Semiconductors Corp
    Tim Hsiao
    Steven Chou
    C. Chen, Momentive Technologies
    Pi-Hsia Wang
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  • 14.7 Threshold power density reduction of 272-nm lasing from AlGaN/AlN multiple-quantum-wells grown on nano-grating AlN/sapphire template

    Ruxue Ni, Institute of Semiconductors, Chinese Academy of Sciences; University of Chinese Academy of Sciences
    Yun Zhang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing
    C. Chen, Momentive Technologies
    Lian Zhang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
    Junxi Wang, Institute of Semiconductor, Chinese Academy of Sciences, Beijing
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  • May 12, 2022 // 3:20pm

    18.3 Heater Performance Improvement with Ceramic Coatings for GaN MOCVD Process

    T. Yamamoto, Momentive Technologies
    B. Kozak, Momentive Technologies
    Y. Morikawa, Momentive Technologies
    T. Higuchi, Momentive Technologies
    Y. Matsui, Momentive Technologies
    D. Sabens, Momentive Technologies
    P. Schmidt-Sane, Momentive Technologies
    J. lennartz, Momentive Technologies
    W. Fan, Momentive Technologies
    C. Chen, Momentive Technologies
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