Abstract
E-mode p-GaN -gate RF HEMT with engineered Mg doping profile was developed and demonstrated for high power amplifier application. Through the design of a low-temperature MOCVD Mg doping profile and a reduction in Mg doping concentration, the diffusion of Mg into AlGaN is minimized compared to traditionally high Mg-doping grown p-GaN. This design enhances the gate modulation capability of p-GaN for RF applications, resulting in a higher gm peak. In addition, the Poole–Frenkel (PF) tunneling induced flicker noise was also suppressed at high input power swing due to low inactivated Mg induced traps. With the engineered Mg-doping profile design, a 61.4 % PAE was achieved together with an output power density close to 1 W/mm at VDS of 10 V which exhibit a highly potential for satellite direct-to-cell and FR3 mobile phone single voltage supply PA applications.
C. -H. Yu
Chang Gung University
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4A.4 – High Power Added Efficiency Enhancement-Mode -Gate RF HEMT with Engineered Mg Doping Profile in p-GaN Layer
Hsien-Chin Chiu, Chang Gung UniversityChong-Rong Huang, Chang Gung UniversityC. -W. Chiu, Chang Gung UniversityC. -H. Lin, Chang Gung UniversityC. -H. Yu, Chang Gung UniversityHsuan-Ling Kao, Chang Gung University,B. Lin, Wavetek Microelectronics Corporation