This work describes an on-going effort to develop and mature a 140 nm GaN MMIC technology with a focus on efficient power amplification at frequencies ranging from DC to 50 GHz and a 90 nm technology targeted towards V- and W-band applications, and then release the technologies within a foundry process that is open to the DoD community.
BAE Systems Inc
140 nm and 90 nm GaN MMIC Technology for Millimeter-wave Power ApplicationsJose Diaz, BAE Systems IncDavid Brown, HRL Laboratories, LLC.Carlton Creamer, BAE Systems IncKanin Chu, BAE Systems IncRichard Isaak, BAE Systems IncLouis Mt. Pleasant, BAE Systems IncDonald Mitchell, BAE Systems IncPuneet Srivastava, BAE Systems IncWen Zhu, BAE Systems IncHong Lu, BAE Systems IncDownload Paper
7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN ElectronicsCarlton Creamer, BAE Systems IncP. C. Chao, MEC, BAE Systems, IQEK K Chu, BAE SystemsA Kassinos, BAE SystemsG Campbell, Science Research Laboratories, Inc.H Eppich, Science Research Laboratories, Inc.A Shooshtari, University of MarylandS Dessiatoun, University of MarylandM Ohadi, University of MarylandC McGray, Modern MicrosystemsR Kallaher, Modern Microsystems