Carlton Creamer

BAE Systems Inc
  • 140 nm and 90 nm GaN MMIC Technology for Millimeter-wave Power Applications

    Jose Diaz, BAE Systems Inc
    David Brown, HRL Laboratories, LLC.
    Carlton Creamer, BAE Systems Inc
    Kanin Chu, BAE Systems Inc
    Richard Isaak, BAE Systems Inc
    Louis Mt. Pleasant, BAE Systems Inc
    Donald Mitchell, BAE Systems Inc
    Puneet Srivastava, BAE Systems Inc
    Wen Zhu, BAE Systems Inc
    Hong Lu, BAE Systems Inc

    This work describes an on-going effort to develop and mature a 140 nm GaN MMIC technology with a focus on efficient power amplification at frequencies ranging from DC to 50 GHz and a 90 nm technology targeted towards V- and W-band applications, and then release the technologies within a foundry process that is open to the DoD community.

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  • 7a.5 Near Junction Thermal Transport and Embedded Cooling of High Power GaN Electronics

    Carlton Creamer, BAE Systems Inc
    P. C. Chao, MEC, BAE Systems, IQE
    K K Chu, BAE Systems
    A Kassinos, BAE Systems
    G Campbell, Science Research Laboratories, Inc.
    H Eppich, Science Research Laboratories, Inc.
    A Shooshtari, University of Maryland
    S Dessiatoun, University of Maryland
    M Ohadi, University of Maryland
    C McGray, Modern Microsystems
    R Kallaher, Modern Microsystems
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