We report the dispersion characteristics of ScAlN/GaN high-electron-mobility transistors (HEMTs) with various epitaxial designs. Devices were fabricated on both ternary (ScAlN) and quaternary (ScAlGaN) materials. The effects of a GaN capping layer was also investigated. We report similar DC and RF performance for all wafers, but significantly worse dispersion which occurs on the quaternary samples. We observe a total gate and drain lag for the ScAlN wafer to be 49% while the ScAlGaN with and without the GaN cap had 10 and 12% dispersion, respectively.
Dispersion Characteristics of ScAlN and ScAlGaN HEMTs by Pulsed I-V MeasurementsKelson Chabak, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USACathy Lee, Qorvo Inc.Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEAndy Xie, QorvoEdward Beam, QORVOAntonio Crespo, AFRLDennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USARobert Fitch, AFRLJames Gillespie, Air Force Research LaboratoryAndrew Green, Air Force Research LaboratoryDownload Paper
20.3 Some Process Development Issues for Ka-band GaN HEMT Individual Source Via (ISV)Yongjie Cui, Qorvo Inc.John Hitt, Qorvo Inc.Tso-Min Chou, Qorvo Inc.Shuoqi Chen, Qorvo Inc.David Gonzalez, Qorvo, Inc.Yinbao Yang, Qorvo, Inc.Trish Smith, Qorvo Inc.Ju-Ai Ruan, Qorvo Inc.Vivian Li, Qorvo Inc.Cathy Lee, Qorvo Inc.Andrew Ketterson, Qorvo Inc.
6a.4 Ablation Laser Dicing for GaN HEMT Device on 100um SiC/Au SubstratesVivian Li, Qorvo Inc.Wade Skelton, Qorvo Inc.Yinbao Yang, Qorvo, Inc.Andrew Ketterson, Qorvo Inc.Michael Lube, QorvoHarold Isom, QorvoCathy Lee, Qorvo Inc.Rob Kraft, Qorvo Inc.