Chang-Ho Lee

WIN Semiconductors Corp.
  • Improved Linearity GaAs pHEMT Technology and the Effect of Bias Circuit on Intermodulation Distortion Measurements

    Shuan-Ming Li, WIN Semiconductors Corp.
    Chang-Ho Lee, WIN Semiconductors Corp.
    Yong-Han Lin, WIN Semiconductors Corp.
    Sheng-Hsien Liu, WIN Semiconductors Corp.

    In this work, we present an overview of WIN’s latest generation of 0.15-mm GaAs pHEMT technology specifically optimized for highly linear PAs for advanced mm-wave communication systems. When compared with the prior technology PP15-51 at either 5.8 or 29 GHz, the new technology PP15-61 outperforms the prior one in multiple respects, including enhanced Pout, an additional linear gain of > 1 dB, a 10 percentage point increase in peak PAE (from ≈ 44% to ≈ 54% at 29 GHz), and, most notably, an improvement of ≈ 3 dB in OIP3 when operated in the linear regions at 29 GHz. As part of routine characterization, the IMD3 asymmetry was further compared for both technologies. Its behavior can be descriptively interpreted in terms of a physical scenario considering effects due to charge trapping, thermal properties, and the bias networks used in the measurements.

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