Chao-Ching Chiang
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18.3.2023 Temperature Independence of Dynamic Switching in 4.8 A /3.6 kV NiO/β-Ga2O3 High Power Rectifiers
Jian-Sian Li, University of Florida, Gainesville, FLChao-Ching Chiang, University of Florida, Gainesville, FLXinyi Xia, University of Florida, Gainesville, FLCheng-Tse Tsai, University of Florida, Gainesville, FLYu-Te Liao, University of Florida, Gainesville, FLStephen Pearton, University of Florida -
18.11.2023 Ionization Thresholds and Residue Removal in Inductively Coupled Etching of NiO/Ga2O3 with Ar and BCl3
Chao-Ching Chiang, University of Florida, Gainesville, FLXinyi Xia, University of Florida, Gainesville, FLJian-Sian Li, University of Florida, Gainesville, FLFan Ren, University of FloridaStephen Pearton, University of Florida -
12.19 – kV-Class Vertical p-n Heterojunction Rectifier Based on ITO/Diamond
H. -H. Wan, University of FloridaC. -C. Chaing, University of Florida, Gainesville, FLJ. -S. Li, University of Florida, Gainesville, FLF. Ren, Dept. of Chem Eng., University of Florida, GainesvilleStephen Pearton, University of FloridaAbstract
ITO layers were sputter-deposited onto commercially available vertical p/p+ diamond structures consisting of 5 μm thick p-type (1.2 × 1016 cm-3) drift layers deposited by Chemical Vapor Deposition on 250 μm thick heavily B-doped (3 × 1020 cm-3) single crystal substrates. The ITO is found to form a type II band alignment allowing Ohmic contact to the p-type diamond and creating a vertical n-p heterojunction. The maximum reverse breakdown of heterojunction rectifiers was ~1.1 kV, with an on-resistance (RON) of 13 mΩ•cm2, leading to a power figure-of-merit of 99.3 MW/cm2. The on-voltage was 1.4 V, diode ideality factor 1.22, with a reverse recovery time of 9.5 ns for 100 μm diameter rectifiers. The on/off ratios when switching from -5 V forward to 100 V reverse were in the range of 1011 to 1012. This is a simple approach to realizing high performance vertical diamond-based rectifiers for power switching applications.