A low- Magnesium (Mg) out-diffusion normally off p-GaN gated AlGaN/GaN high-electron-mobility transistor (HEMT) was developed using a low-temperature laser activation technique. Conventionally, during the actual p-GaN layer activation procedure, Mg out-diffuses into the AlGaN barrier and GaN channel at high temperatures. In addition, the Al of the AlGaN barrier layer is injected into GaN to generate alloy scattering and to suppress current density. In this study, the GaN doped Mg layer (Mg:GaN)was activated using short-wavelength Nd:YAG pulse laser annealing, and a conventional thermal activation device was processed for comparison. The results demonstrated that the laser activation technique in p-GaN HEMT suppressed the Mg out-diffusion-induced leakage current and trapping effect and enhanced the current density and breakdown voltage. Therefore, using this novel technique, a high and active Mg concentration and a favorable doping confinement can be obtained in the p-GaN layer to realize a stable enhancement-mode operation.
The Improvement of Mg Out-diffusion in Normally-off p-GaN Gate HEMT Using Pulsed Laser Activation TechniqueChong Rong Haung, Chang Gung UniversityHsiang-Chun Wang, Chang Gung UniversityChao-Wei Chiu, Chang Gung UniversityDownload Paper
The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer DesignChong Rong Huang, Chang Gung UniversityDownload Paper
In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioff ratio of the BB device was 3.43 × 105 and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-μm gate length device with the BB exhibited a high current gain cutoff frequency of 26.9 GHz and power gain cutoff frequency of 54.7 GHz.
High Gate Voltage Swing Region of Normally-off p-GaN MIS-HEMT With ALD-Growth Al2O3/AlN Gate Insulator LayerJin-Ping Ao, The University of TokushimaChi-Chuan Chiu, Chang Gung UniversityDownload Paper
Metal–insulator–semiconductor p-type GaN high-electron-mobility transistor with an Al2O3/AlN deposited by atomic layer deposition was investigated. The selected insulator, AlN has been proven to have a good interface with GaN. A traditional p-GaN device without an Al2O3/AlN layer was processed for comparison. Due to the Al2O3/AlN layer, the gate leakage was lower, and the threshold voltage was higher, at 4.7 V. Additionally, excellent turn-on voltage was obtained. Furthermore, low current degradation and smaller VTH shift at high temperatures was also observed. Hence, growing a good-quality Al2O3/AlN layer can achieve an enhancement-mode operation with superior stability and high gate swing region.
The Impact of AlxGa1-xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on 6-inch MCZ Si SubstrateYen-Lun HuangHsien-Chin Chiu, Chang Gung UniversityH.Y. Wang, Chang Gung UniversityChia-Hao Liu, Chang Gung UniversityWEN-CHING HSUCHE-MING LIUCHIH-YUAN CHUANGJIA-ZHE LIUDownload Paper
In this study, AlGaN back barriers (B.B.) with different Al mole fractions and thicknesses were used in AlGaN/GaN high electron mobility transistors (HEMTs) to improve device performance. Relative to thickness, a proper Al mole fraction (Al0.08GaN) of the B.B. more strongly affected the device’ Ion/Ioff ratio. It exhibited a low leakage current and high Ion/Ioff ratio of approximately 106. Relative to B.B. mole fraction, B.B. thickness more greatly affected the devices’ horizontal breakdown voltage (760V) and LFN characteristics. Increasing the Al mole fraction and the thickness of the B.B. more strongly affected the dynamic RON. The current gain cut-off frequency (fT) and maximum stable gain cut-off frequency (fmax) were 5.2 GHz and 10.5 GHz, respectively, for the Al0.08GaN B.B. device.