Chao Yang

University of Electronic Science and Technology of China, Chengdu, China
  • May 02, 2019 // 3:40pm – 4:30pm

    18.13 A Novel AlGaN/GaN MIS-HEMT with Enhanced Breakdown Voltage and Reduced Interface Trap Density

    Anbang Zhang, University of Electronic Science and Technology of China, Chengdu, China
    Chao Yang, University of Electronic Science and Technology of China, Chengdu, China
    Xiaorong Luo, University of Electronic Science and Technology of China, Chengdu, China
    Tao Sun, University of Electronic Science and Technology of China, Chengdu, China
    Dongfa Ouyang, University of Electronic Science and Technology of China, Chengdu, China
    Siyu Deng, University of Electronic Science and Technology of China, Chengdu, China
    Jie Wei, University of Electronic Science and Technology of China, Chengdu, China
    Bo Zhang, University of Electronic Science and Technology of China
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