Chao Zhao

Chinese Academy of Sciences
  • 12.5 Investigation of Thermal Stability of TiN/O3-Al2O3/GaN Metal-Oxide-Semiconductor Diodes with 2 nm H2O-Al2O3 as Oxide/III-Nitride Interfacial Layer

    Sen Huang*, Student Presentation , Hong Kong University of Science and Technology, Institute of Microelectronics Chinese Academy of Science
    Qilong Bao, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    Xinghua Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    Ke Wei, Institute of Microelectronics, Chinese Academy of Sciences
    Xiaolei Wang, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
    Shiping Guo, IQE RF LLC
    Junfeng Li, Chinese Academy of Sciences
    Xinyu Liu, Institute of Microelectronics, Chinese Academy of Sciences
    Chao Zhao, Chinese Academy of Sciences
    Jinjuan Xiang
    Shumin Chai
    Yankui Li
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