Cheng Liu
Xiamen San'an Integrated Circuit Co., Ltd.
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6.4 Comparison of Floating and Grounded Substrate Termination on the Dynamic Performance of GaN-on-Si Power Transistors
Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.Yutao Fang, Xiamen San'an Integrated Circuit Co., Ltd.Shenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.Xiaowei Yang, Xiamen San'an Integrated Circuit Co., Ltd.Xuran Liu, Xiamen San'an Integrated Circuit Co., Ltd.Bing-Han Chuang, Xiamen San'an Integrated Circuit Co., Ltd.Bo Zhou, Xiamen San'an Integrated Circuit Co., Ltd.Nien-Tze Yeh, Xiamen San'an Integrated Circuit Co., Ltd.Frank Xu, Xiamen San'an Integrated Circuit Co., Ltd. -
9.3 Compatibility of AlN/SiNx Passivation Technique with High-Temperature Process
Mengyuan Hua, The Hong Kong University of Science and TechnologyYunyou Lu, The Hong Kong University of Science and TechnologyShenghou Liu, Xiamen San'an Integrated Circuit Co., Ltd.Cheng Liu, Xiamen San'an Integrated Circuit Co., Ltd.Kai Fu, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of ScienceYong Cai, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of ScienceBaoshun Zhang, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of ScienceKevin J. Chen, The Hong Kong University of Science and Technology