Chong Rong Huang

Chang Gung University
  • The Characteristics of 6-inch GaN on Si RF HEMT with High Isolation Composited Buffer Layer Design

    Chong Rong Huang, Chang Gung University

    In this study, a 50-nm Al0.05Ga0.95N back barrier (BB) layer was used in an AlGaN/GaN high-electron-mobility transistor between the two-dimensional electron gas channel and Fe-doped/C-doped buffer layers. This BB layer can reduce the channel layer. The BB layer is affected by doped carriers in the buffer layer and the conduction energy band between the channel and the buffer layers. The Ion/Ioff ratio of the BB device was 3.43 × 105 and the ratio for the device without BB was 1.91 × 103. Lower leakage currents were obtained in the BB device because of the higher conduction energy band. The 0.25-μm gate length device with the BB exhibited a high current gain cutoff frequency of 26.9 GHz and power gain cutoff frequency of 54.7 GHz.

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  • The Impact of AlxGa1-xN Back Barrier in AlGaN/GaN High Electron Mobility Transistors (HEMTs) on 6-inch MCZ Si Substrate

    Yen-Lun Huang
    Hsien-Chin Chiu, Chang Gung University
    H.Y. Wang, Chang Gung University
    Chia-Hao Liu, Chang Gung University
    WEN-CHING HSU
    CHE-MING LIU
    CHIH-YUAN CHUANG
    JIA-ZHE LIU

    In this study, AlGaN back barriers (B.B.) with different Al mole fractions and thicknesses were used in AlGaN/GaN high electron mobility transistors (HEMTs) to improve device performance. Relative to thickness, a proper Al mole fraction (Al0.08GaN) of the B.B. more strongly affected the device’ Ion/Ioff ratio. It exhibited a low leakage current and high Ion/Ioff ratio of approximately 106. Relative to B.B. mole fraction, B.B. thickness more greatly affected the devices’ horizontal breakdown voltage (760V) and LFN characteristics. Increasing the Al mole fraction and the thickness of the B.B. more strongly affected the dynamic RON. The current gain cut-off frequency (fT) and maximum stable gain cut-off frequency (fmax) were 5.2 GHz and 10.5 GHz, respectively, for the Al0.08GaN B.B. device.

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  • 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

    Ming Chin Chen, Unikorn Semiconductor Corporation
    Chia Cheng Liu, Unikorn Semiconductor Corporation
    Vladimir Odnoblyudov, Qromis, Inc.
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  • 5.6.2021 High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6- inch N-doped Low Resistivity SiC Substrate

    Yu-Chun Huang, Chang Gung University,
    Hsuan-Ling Kao, Chang Gung University,
    Si-Wen Chen, Chang Gung University,
  • 18.16.2023 Electrical and Thermal Performance Analysis of AlGaN/GaN HEMT without Voltage-Blocking Buffer Layer Design

    Chong Rong Huang, Chang Gung University
    Hsien-Chin Chiu, Chang Gung University
    Chia-Hao Liu, Chang Gung University
    Hsiang-Chun Wang, Chang Gung University
    Chao-Wei Chiu, Chang Gung University
    Hsuan-Ling Kao, Chang Gung University,
    Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
    Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology

    18.16.2023_Huang V1 with Marty edits all accepted