D. Fahle

AIXTRON SE

  • 8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication

    K. Geens, imec,
    H. Hahn, AIXTRON SE
    H. Liang, imec,
    M. Borga, imec
    D. Cingu, imec
    S. You, imec
    M. Marx, AIXTRON SE
    R. Oligschlaeger, AIXTRON SE
    D. Fahle, AIXTRON SE
    M. Heuken, AIXTRON SE
    V. Odnoblyudov, Qromis, inc.
    O. Aktas, Qromis, Inc.
    C. Basceri, Qromis, Inc.
    S. Decoutere, imec
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  • 2.2.3.2024 Depleted AlN/Si interfaces for minimizing RF loss in GaN-on-Si HEMTs

    H. Hahn, AIXTRON SE
    C. Mauder, AIXTRON SE
    M. Marx, AIXTRON SE
    Z. Gao, AIXTRON SE
    P. Lauffer, AIXTRON SE
    O. Schon, AIXTRON SE
    P. T. John, AIXTRON SE
    S. Banerjee, imec
    P. Cardinael, Imec and Université catholique de Louvain
    J. P. Raskin, Université catholique de Louvain
    B. Parvais, imec & Vrije Universiteit Brussels
    lin, imec
    D. Fahle, AIXTRON SE
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