Daniel Feezell

Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
  • Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates

    Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
    James Speck, UCSB
    Steven DenBaars, UCSB
  • 14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes

    Hao Qu, Momentive Performance Materials
    Wei Fan, Momentive Performance Materials Inc
    Ashwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
    Morteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
    Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
    Sudarshan Natarajan, Momentive Performance Materials
    Creighton Tomek, Momentive Performance Materials
    Gregory Shaffer, Momentive Performance Materials
    B. Kozak, Momentive Technologies
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