Daniel Feezell
Center for High Technology Materials, Department of Electrical Engineering, University of New Mexico
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Optoelectronic Devices Grown on Nonpolar and Semipolar Free-Standing GaN Substrates
Daniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoJames Speck, UCSBSteven DenBaars, UCSB -
14.2 TaC Coated Wafer Carrier for GaN MOCVD for Blue Light-Emitting Diodes
Hao Qu, Momentive Performance MaterialsWei Fan, Momentive Performance Materials IncAshwin Rishinaramangalam, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoMorteza Monavarian, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoDaniel Feezell, Center for High Technology Materials, Department of Electrical Engineering, University of New MexicoSudarshan Natarajan, Momentive Performance MaterialsCreighton Tomek, Momentive Performance MaterialsGregory Shaffer, Momentive Performance MaterialsB. Kozak, Momentive Technologies