Daniel Francis

Akash Systems, San Francisco, CA, USA
  • Material Studies of GaN on Diamond

    Sergey Zaitsev, Group4 Labs, Inc.
    Frank Lowe, Akash Systems, San Francisco, CA, USA
    Daniel Francis, Akash Systems, San Francisco, CA, USA
    Firooz Faili, Element Six Technologies, Santa Clara, CA
  • 16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond

    Dong Liu, University of Oxford, University of Bristol
    Daniel Francis, Akash Systems, San Francisco, CA, USA
    Firooz Faili, Element Six Technologies, Santa Clara, CA
    James Pomeroy, University of Bristol
    Daniel Twitchen, Element Six Ltd.
    Martin Kuball, University of Bristol
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  • GaN-on-diamond: the correlation between interfacial toughness and thermal resistance

    Daniel Francis, Akash Systems, San Francisco, CA, USA
    Daniel Field, University of Bristol
    Caho Yuan, University of Bristol
    Roland Simon, Thermap Solutions
    Daniel Twitchen, Element Six Ltd.
    Firooz Faili, Element Six Technologies, Santa Clara, CA
    Dong Liu, University of Oxford, University of Bristol
    Martin Kuball, University of Bristol

    A nanoindentation induced blistering method has been used to extract the GaN/diamond interfacial toughness (adhesion energy) from four types of GaN-on-diamond samples with varying SiNx interlayer thicknesses. The mode I energy release rate (GIC) was quantified and is presented. Additionally, transient thermoreflectance has been used to measure the thermal boundary resistance (TBR) between the GaN and the diamond substrate. It was found that a thin SiNx interlayer resulted in a lower TBR (15 m2 K GW-1) whilst maintaining a reasonable interfacial toughness (1.4±0.5 J m-2). For interlayers of a similar thickness, samples with a high interfacial toughness and high residual stresses in the GaN had a smaller TBR. This indicates that the intrinsic interfacial characteristics that enhanced the interfacial toughness could be beneficial in improving the TBR.

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  • 8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties

    Martin Kuball, University of Bristol
    Huarui Sun, University of Bristol
    Dong Liu, University of Oxford, University of Bristol
    James Pomeroy, University of Bristol
    Daniel Francis, Akash Systems, San Francisco, CA, USA
    Firooz Faili, Element Six Technologies, Santa Clara, CA
    Daniel Twitchen, Element Six Ltd.
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  • 2.1.2021 GaN-on-diamond design for manufacturing

    Daniel Francis, Akash Systems, San Francisco, CA, USA
    Frank Lowe, Akash Systems, San Francisco, CA, USA
    Kyle Graham, Akash Systems, San Francisco, CA, USA
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  • 10.1.3.2024 3D Diamond Growth for GaN Cooling and TBR Reduction

    Daniel Francis, Akash Systems, San Francisco, CA, USA
    Sai Charan Vanjari, University of Bristol
    Xiaoyang Ji, University of Bristol
    Tatyana Feygelson, U. S. Naval Research Laboratory
    Joseph Spencer, U.S. Naval Research Laboratory
    Hannah N. Masten, National Research Council Postdoctoral Fellow, Residing at NRL
    Alan Jacobs, U.S. Naval Research Laboratory
    James Spencer Lundh, National Research Council Postdoctoral Fellow, Residing at NRL
    Marko Tadjer, U.S. Naval Research Laboratory
    Travis J. Anderson, U.S. Naval Research Laboratory
    Karl D. Hobart, U.S. Naval Research Laboratory
    Bradford Pate, Naval Research Laboratory
    James Pomeroy, University of Bristol
    Matthew Smith, University of Bristol
    Martin Kuball, University of Bristol
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