A nanoindentation induced blistering method has been used to extract the GaN/diamond interfacial toughness (adhesion energy) from four types of GaN-on-diamond samples with varying SiNx interlayer thicknesses. The mode I energy release rate (GIC) was quantified and is presented. Additionally, transient thermoreflectance has been used to measure the thermal boundary resistance (TBR) between the GaN and the diamond substrate. It was found that a thin SiNx interlayer resulted in a lower TBR (15 m2 K GW-1) whilst maintaining a reasonable interfacial toughness (1.4±0.5 J m-2). For interlayers of a similar thickness, samples with a high interfacial toughness and high residual stresses in the GaN had a smaller TBR. This indicates that the intrinsic interfacial characteristics that enhanced the interfacial toughness could be beneficial in improving the TBR.
Daniel Francis
Akash Systems, San Francisco, CA, USA
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Material Studies of GaN on Diamond
Sergey Zaitsev, Group4 Labs, Inc.Frank Lowe, Akash Systems, San Francisco, CA, USADaniel Francis, Akash Systems, San Francisco, CA, USAFirooz Faili, Element Six Technologies, Santa Clara, CA -
16.1 Effect of Manufacture on the Microstructure of GaN-on-Diamond
Dong Liu, University of Oxford, University of BristolDaniel Francis, Akash Systems, San Francisco, CA, USAFirooz Faili, Element Six Technologies, Santa Clara, CAJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKDaniel Twitchen, Element Six TechnologiesMartin Kuball, University of Bristol -
GaN-on-diamond: the correlation between interfacial toughness and thermal resistance
Daniel Francis, Akash Systems, San Francisco, CA, USADaniel Field, University of BristolCaho Yuan, University of BristolRoland Simon, Thermap SolutionsDaniel Twitchen, Element Six TechnologiesFirooz Faili, Element Six Technologies, Santa Clara, CADong Liu, University of Oxford, University of BristolMatin Kuball, University of Bristol, Bristol, UK,Download Paper -
8a.4 GaN-on-Diamond: Robust Mechanical and Thermal Properties
Martin Kuball, University of BristolHuarui Sun, University of BristolDong Liu, University of Oxford, University of BristolJames Pomeroy, University of Bristol, Bristol, UK and 3TherMap Solutions, Bristol, UKDaniel Francis, Akash Systems, San Francisco, CA, USAFirooz Faili, Element Six Technologies, Santa Clara, CADaniel Twitchen, Element Six Technologies -
2.1.2021 GaN-on-diamond design for manufacturing
Daniel Francis, Akash Systems, San Francisco, CA, USAFrank Lowe, Akash Systems, San Francisco, CA, USAKyle Graham, Akash Systems, San Francisco, CA, USADownload PaperLoading...