This work describes an on-going effort to develop and mature a 140 nm GaN MMIC technology with a focus on efficient power amplification at frequencies ranging from DC to 50 GHz and a 90 nm technology targeted towards V- and W-band applications, and then release the technologies within a foundry process that is open to the DoD community.
David Brown
HRL Laboratories, LLC.
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140 nm and 90 nm GaN MMIC Technology for Millimeter-wave Power Applications
Jose Diaz, BAE Systems IncDavid Brown, HRL Laboratories, LLC.Carlton Creamer, BAE Systems IncKanin Chu, BAE Systems IncRichard Isaak, BAE Systems IncLouis Mt. Pleasant, BAE Systems IncDonald Mitchell, BAE Systems IncPuneet Srivastava, BAE Systems IncWen Zhu, BAE Systems IncHong Lu, BAE Systems IncDownload Paper -
9.1 Preliminary DC Evaluation of HRL’s T3 GaN Technology Reliability Characteristics
Download PaperShawn Burnham, HRL Laboratories, LLC.Ross Bowen, HRL Laboratories, LLC.Joe Tai, HRL Laboratories, Malibu, CA,David Brown, HRL Laboratories, LLC.Robert Grabar, HRL Laboratories, Malibu, CA,Dayward Santos, HRL Laboratories, LLC.Jesus Magadia, HRL Laboratories, LLC.Isaac Khalaf, HRL Laboratories, LLC.Miroslav Micovic, HRL Laboratories, LLC. -
3.5.2023 Transfer and Implementation of AFRL 140nm Technology on 6-in GaN on SiC
Wen Zhu, BAE Systems IncDavid Brown, HRL Laboratories, LLC.Puneet Srivastava, BAE Systems IncKanin Chu, BAE Systems Inc