Dennis Williams

WIN Semiconductors Corp

  • High Efficiency and High Ruggedness InGaP/GaAs HBT EPI Design

    Rei-Bin Chiou, WIN Semiconductors Corp.
    Ta-Chuan Kuo, WIN Semiconductors Corp.
    Cheng-Kuo Lin, WIN Semiconductors Corp
    Shu-Hsiao Tsai, WIN Semiconductors Corp
    Shin-Yi Ho, National Taiwan University
    Tung-Yao Chou, WIN Semiconductors Corp.
    Dennis Williams, WIN Semiconductors Corp
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  • April 30, 2019 // 4:10pm – 4:30pm

    4.2 Investigation of RF Performance of InGaP/GaAs HBT Power Stage with Flip-Chip Bumping Technology

    Tung-Yao Chou, WIN Semiconductors Corp.
    Dennis Williams, WIN Semiconductors Corp
    Yu-Chi Wang, WIN Semiconductors Corp
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  • 4.3 The Study of InGaP/GaAs HBT for Ruggedness Characteristics

    Ju-Hsien Lin, WIN Semiconductors Corp.
    Rei-Bin Chiou, WIN Semiconductors Corp.
    Jung-Hao Hsu, WIN Semiconductors Corp.
    Shu-Hsiao Tsai, WIN Semiconductors Corp
    Chia-Ta Chang, WIN Semiconductors Corp.
    Chang-Ho Li, WIN Semiconductors Corp.
    Tung-Yao Chou, WIN Semiconductors Corp.
    Cheng-Kuo Lin, WIN Semiconductors Corp
    Dennis Williams, WIN Semiconductors Corp
    Yu-Chi Wang, WIN Semiconductors Corp
    Download Paper