GaN power ICs on engineered substrates of Qromis substrate technology (QST®) are promising for future power applications thanks to the reduced parasitics, thermally matched substrate of poly-AlN, high thermal conductivity, high mechanical yield in combination with thick GaN buffer layers. In this work, we will elaborate in detail on epitaxy, integration, and trench isolation. Electrical characterizations show that the GaN buffer bear a breakdown voltage of > 650 V under the criterion of 10 μA/mm2 leakage current at 150 °C. The fabricated 36 mm power HEMTs with LGD of 16 µm show a high threshold voltage of 3.1 V and a low OFF-state drain leakage of <1 µA/mm until 650 V. The horizontal trench isolation breakdown voltage exceeds 850 V. The device dispersion is well controlled within 20% over full temperature and bias range. Finally, GaN power ICs on this platform are demonstrated.
Integration of GaN Power ICs on 200 mm Engineered SubstratesStefaan Decoutere, imec, Leuven, BelgiumXiangdong Li, imecXiangdong Li, KU LeuvenKaren Geens, imec, Leuven, BelgiumDirk Wellekens, imecMing Zhao, imecAlessandro Magnani, imecNooshin Amirifar, imecBenoit Bakeroot, imec, Leuven, Belgium and CMST, imec & Ghent University, Ghent, BelgiumShuzhen You, imecDirk Fahle, AIXTRON SEHerwig Hahn, AIXTRON SEMichael Heuken, AIXTRON SEVlad Odnoblyudov, QROMIS, USAOzgur Aktas, QROMIS, USACem Basceri, QROMIS, USADenis Marcon, imecGuido Groeseneken, KU LeuvenGuido Groeseneken, imecDownload Paper