This work characterizes the effects of gate-length (LG) scaling in a self-aligned gate (SAG) β-Ga2O3 MOSFET process. Additional performance gains are expected by extending the SAG process from large LG to sub-micrometer dimensions. This data incorporates LG scaling down to 200 nm to improve device performance in Ga2O3 SAG MOSFETs using a stepper lithography process to define sub-micron gate lengths.
Air Force Research Laboratory Materials and Manufacturing Directorate
Self-Aligned Refractory Metal Gate Scaling in β-Ga2O3 MOSFETsKelson Chabak, Air Force Research LaboratoryKyle Liddy, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USAAndrew Green, Air Force Research LaboratoryThaddeus Asel, Air Force Research Laboratory, Wright Patterson AFB, OH, USAShin Mou, Air Force Research Laboratory, Wright Patterson AFB, OHKevin Leedy, AFRLDonald Dorsey, Air Force Research Laboratory Materials and Manufacturing DirectorateDownload Paper