Drew Hanser

Veeco Instruments, Inc.

  • InAlN HEMT Epi and RF Devices on 8”-Si

    Huili Xing, Cornell University
    Ming Pan, Veeco Instruments
    Soo-Min Lee, Veeco Instruments
    Eric Tucker, Veeco Instruments
    Randhir Bubber, Veeco Instruments
    Ajit Paranjpe, Veeco Instruments
    Drew Hanser, Veeco Instruments, Inc.
    Kazuki Nomoto, Cornell University
    Lei Li, Cornell University
    Debdeep Jena, Cornell University

    In this paper, we report our work on epitaxial growth of InAlN HEMTs for RF device applications.  InAlN HEMTs were grown on 8” high resistivity silicon substrates. Various characterization techniques were used to analyze the quality of the epi wafers. An average sheet resistance (Rsh) of 206Ω/□, with a uniformity of 1.5% (1s/average), indicated a high quality and uniform 2DEG. Hall measurement showed a high sheet charge density of 2.27×1013cm−2 and a mobility of 1430cm2/(Vs). A pit free epi surface was obtained with optimized growth process of the active layers. T-gate RF devices fabricated on the InAlN epi wafers demonstrated an fT of 250GHz and an fMAX of 204 GHz, which are the record high values for GaN-based HEMTs on silicon.

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  • 10B.3 – Determination of 4H-SiC Drift Layer Quality with Mercury (Hg) Probe Capacitance-Voltage (CV) and Current-Voltage (IV) Measurements

    M. G. Coco Jr., Veeco Instruments Inc.
    F. Ramos, Veeco Instruments Inc.
    B. Kim, Veeco Instruments Inc.
    S. M. Lee, Veeco Instruments Inc.
    Drew Hanser, Veeco Instruments, Inc.
    R. J. Hillard, Semilab USA
    S. Frey, Semilab USA
    T. MacRae, Semilab USA
    B. Vigh, Semilab, Budapest
    A. Marton, Semilab USA
    G. Zsakai, Semilab, Budapest
    J. Janicsko-Csathy, Semilab, Budapest
    P. Horvath, Semilab, Budapest

    10B.3 Final.2025

    Abstract
    Silicon Carbide (SiC) power MOSFET performance depends on many key process and material properties. The drift layer active carrier concentration and thickness are important factors for defining device properties. Drift layer carrier concentration can be monitored easily by capacitance-voltage (CV) measurements. The leakage current (Ileak), breakdown voltage (VBD) and on-state resistivity (RON-sp) are all highly affected by control of the active carrier concentration profile and are monitorable by current-voltage (IV) measurements. Inadequate quality of the 4H-SiC epitaxial processes can degrade device performance and induce failure of the power MOSFET. In this paper, a high repeatability mercury probe is used to monitor these crucial electrical parameters and allows for a rapid response in improving and predicting final device behavior.