Fabrication techniques and experimental data are presented for 850 nm GaAs P-i-N photodiodes designed for 50 Gb/s optical links. Optimizations in the device structure and the selective dry etching process reduce dark current below 1pA. Responsivity is shown to be comparable to commercial devices with similar dimensions. And microwave measurement shows a highest bandwidth of above 30 GHz, indicating potential for 60 Gb/s operation. Data rate testing is performed with a VCSEL up to 50 Gb/s, showing clear eye diagrams.
University of Illinois at Urbana Champaign
850 nm GaAs P-i-N Photodiodes for 50 Gb/s Optical Links with Dark Current below 1 pADufei Wu, University of Illinois at Urbana ChampaignYu-Ting Peng, University of Illinois, Urbana-ChampaignMilton Feng, University of Illinois, Urbana-ChampaignDownload Paper
14.4 Process Optimization and Characterization of 25 GHz Bandwidth 850 nm P-i-N Photodetector for 50 Gb/s Optical LinksYu-Ting Peng, University of Illinois at Urbana ChampaignDufei Wu, University of Illinois at Urbana ChampaignArdy Winoto, University of Illinois at Urbana Champaign
9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and PhotodetectorsDufei Wu, University of Illinois at Urbana ChampaignXin Yu, University of Illinois at Urbana-ChampaignYu-Ting Peng, University of Illinois, Urbana-ChampaignMilton Feng, University of Illinois, Urbana-ChampaignDownload Paper
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