Dufei Wu

University of Illinois at Urbana Champaign
  • 850 nm GaAs P-i-N Photodiodes for 50 Gb/s Optical Links with Dark Current below 1 pA

    Dufei Wu, University of Illinois at Urbana Champaign
    Yu-Ting Peng, University of Illinois, Urbana-Champaign
    Milton Feng, University of Illinois, Urbana-Champaign

    Fabrication techniques and experimental data are presented for 850 nm GaAs P-i-N photodiodes designed for 50 Gb/s optical links. Optimizations in the device structure and the selective dry etching process reduce dark current below 1pA. Responsivity is shown to be comparable to commercial devices with similar dimensions. And microwave measurement shows a highest bandwidth of above 30 GHz, indicating potential for 60 Gb/s operation. Data rate testing is performed with a VCSEL up to 50 Gb/s, showing clear eye diagrams.

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  • 14.4 Process Optimization and Characterization of 25 GHz Bandwidth 850 nm P-i-N Photodetector for 50 Gb/s Optical Links

    Yu-Ting Peng, University of Illinois at Urbana Champaign
    Dufei Wu, University of Illinois at Urbana Champaign
    Ardy Winoto, University of Illinois at Urbana Champaign
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  • 9.5.2021 Benzocyclonbute (BCB) Process Development and Optimization for High-Speed GaAs VCSELs and Photodetectors

    Dufei Wu, University of Illinois at Urbana Champaign
    Xin Yu, University of Illinois at Urbana-Champaign
    Yu-Ting Peng, University of Illinois, Urbana-Champaign
    Milton Feng, University of Illinois, Urbana-Champaign
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  • 14.4.2023 Developing Single-Mode VCSEL for Extending High-Speed PAM4 Transmitting Distance in SMF-28 Fiber Up to 1 km and 70 °C

    Haonan Wu, University of Illinois at Urbana-Champaign, Holonyak Micro & Nanotechnology Lab,
    Dufei Wu, University of Illinois at Urbana Champaign
    Xin Yu, University of Illinois at Urbana-Champaign
    Milton Feng, University of Illinois, Urbana-Champaign

    14.4.2023 Wu