Abstract – The utilization of electron beam lithography (EBL) as a wafer scale technique for the fabrication of compound semiconductor devices provides unique challenges in terms of both application and throughput. We report on wafer scale EBL in the context of fabricating edge emitting lasers on 150mm indium phosphide (InP) substrates. A hybrid electro-optical lithography process is used to pattern typical ridge waveguide (RWG) laser structures, while overcoming some of the practical challenges associated with fabricating these devices on large wafer platforms.
E. Beaumont
Cardiff University
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11A.1 – A Hybrid Electron Beam Lithography Approach to Wafer Scale Up of 150mm InP Ridge Lasers
Thomas Peach, Cardiff UniversityT. Jones, Cardiff UniversityB. Salmond, Cardiff UniversityS. Thomas, Cardiff UniversityE. Beaumont, Cardiff UniversityA. Sobiesierski, Cardiff UniversitySamuel Shutts, Cardiff University