Abstract
At ATL, innovation drives the development of new technologies to meet customer needs, including in the semiconductor fabrication process. Shifts in processing can lead to issues like cross-contamination, impacting processes such as L-Band power transistor production. Residue left after photoresist strip processes caused concerns, affecting wafer quality and potentially leading to emitter-base shorts. Through a rigorous investigation and experimentation with different photoresist strip methods, a more effective approach using an alternate Asher tool was found. Implementing this new method significantly reduced residue, improving production yield and resolving process challenges in semiconductor manufacturing at ATL.
E. Woodard
Northrop Grumman
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12.10 – Improvements in Photoresist Strip Process in RF Power Transistors
D. Lee, Northrop GrummanT. N. Walter, Northrop GrummanG. Castejon Cruz, Northrop GrummanJ. Wu, Northrop GrummanA. Frimel, Northrop GrummanS. Harrell, Northrop GrummanE. Woodard, Northrop GrummanP. A. Potyraj, Northrop Grumman
