F. Ramos

Veeco Instruments Inc.

  • 10B.3 – Determination of 4H-SiC Drift Layer Quality with Mercury (Hg) Probe Capacitance-Voltage (CV) and Current-Voltage (IV) Measurements

    M. G. Coco Jr., Veeco Instruments Inc.
    F. Ramos, Veeco Instruments Inc.
    B. Kim, Veeco Instruments Inc.
    S. M. Lee, Veeco Instruments Inc.
    Drew Hanser, Veeco Instruments, Inc.
    R. J. Hillard, Semilab USA
    S. Frey, Semilab USA
    T. MacRae, Semilab USA
    B. Vigh, Semilab, Budapest
    A. Marton, Semilab USA
    G. Zsakai, Semilab, Budapest
    J. Janicsko-Csathy, Semilab, Budapest
    P. Horvath, Semilab, Budapest

    10B.3 Final.2025

    Abstract
    Silicon Carbide (SiC) power MOSFET performance depends on many key process and material properties. The drift layer active carrier concentration and thickness are important factors for defining device properties. Drift layer carrier concentration can be monitored easily by capacitance-voltage (CV) measurements. The leakage current (Ileak), breakdown voltage (VBD) and on-state resistivity (RON-sp) are all highly affected by control of the active carrier concentration profile and are monitorable by current-voltage (IV) measurements. Inadequate quality of the 4H-SiC epitaxial processes can degrade device performance and induce failure of the power MOSFET. In this paper, a high repeatability mercury probe is used to monitor these crucial electrical parameters and allows for a rapid response in improving and predicting final device behavior.