Fabian Radulescu

Radulescu LLP
  • May 01, 2019 // 4:40pm – 5:00pm

    12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band

    Kyle Bothe, University of Alberta
    Terry Alcorn, Wolfspeed | A Cree Company
    Jennifer Gao, Wolfspeed | A Cree Company
    Chris Hardiman, Wolfspeed | A Cree Company
    Evan Jones, Wolfspeed | A Cree Company
    Dan Namishia, Wolfspeed | A Cree Company
    Fabian Radulescu, Radulescu LLP
    Satyaki Ganguly, Wolfspeed | A Cree Company
    Don Gajewski, Wolfspeed | A Cree Company
    Jeremy Fisher, Wolfspeed | A Cree Company
    Scott Sheppard, Wolfspeed | A Cree Company
    Jeffrey Barner, Wolfspeed | A Cree Company
    Jim Milligan, Wolfspeed | A Cree Company
    Bruce Schmukler, Wolfspeed | A Cree Company
    Download Paper
  • GaN-on-SiC MMIC Production for S-Band and EW-Band Applications

    Ryan Fury
    Scott Sheppard, Wolfspeed | A Cree Company
    Jeffrey B. Barner
    Bill Pribble
    Jeremy Fisher, Wolfspeed | A Cree Company
    Donald A. Gajewski
    Fabian Radulescu, Radulescu LLP
    Helmut Hagleitner
    Dan Namishia, Wolfspeed | A Cree Company
    Zoltan Ring
    Jennifer Gao, Wolfspeed | A Cree Company
    Sangmin Lee, Wavice Inc.
    Download Paper
  • An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products

    Simon M. Wood
    Scott T. Sheppard
    Fabian Radulescu, Radulescu LLP
    Don A. Gajewski
    Bill Pribble
    Donald Farrell
    Ulf Andre Jeffrey B. Barner
    Download Paper
  • 3B.1 – The Next Global GaN Patent Wars

    Fabian Radulescu, Radulescu LLP

    3B.1 Final.2025

    Abstract
    The resurgence of patent litigation in the gallium nitride (GaN) space marks the beginning of a new global conflict, this time centered on GaN power transistors rather than LEDs. This talk traces the unfolding legal battles among key players in this nascent market—EPC, Innoscience, and Infineon—highlighting a complex, multi-jurisdictional struggle with significant commercial stakes. Drawing parallels to the GaN LED patent wars 25 years ago, the analysis underscores how strategic patent enforcement, venue selection, and global coordination are once again shaping the competitive landscape. With litigation now reaching courts and agencies across the U.S., Europe, and China, this paper argues that intellectual property has become a decisive factor in market positioning and survival within the fast-growing GaN power device industry.