Fabian Radulescu
Wolfspeed | A Cree Company
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May 01, 2019 // 4:40pm – 5:00pm
12.3 Optically-Defined 150 nm 28 V GaN HEMT Process for Ka-Band
Download PaperKyle Bothe, University of AlbertaTerry Alcorn, Wolfspeed | A Cree CompanyJennifer Gao, Wolfspeed | A Cree CompanyChris Hardiman, Wolfspeed | A Cree CompanyEvan Jones, Wolfspeed | A Cree CompanyDan Namishia, Wolfspeed | A Cree CompanyFabian Radulescu, Wolfspeed | A Cree CompanySatyaki Ganguly, Wolfspeed | A Cree CompanyDon Gajewski, Wolfspeed | A Cree CompanyJeremy Fisher, Wolfspeed | A Cree CompanyScott Sheppard, Wolfspeed | A Cree CompanyJeffrey Barner, Wolfspeed | A Cree CompanyJim Milligan, Wolfspeed | A Cree CompanyBruce Schmukler, Wolfspeed | A Cree Company -
GaN-on-SiC MMIC Production for S-Band and EW-Band Applications
Download PaperRyan FuryScott Sheppard, Wolfspeed | A Cree CompanyJeffrey B. BarnerBill PribbleJeremy Fisher, Wolfspeed | A Cree CompanyDonald A. GajewskiFabian Radulescu, Wolfspeed | A Cree CompanyHelmut HagleitnerDan Namishia, Wolfspeed | A Cree CompanyZoltan RingJennifer Gao, Wolfspeed | A Cree CompanySangmin Lee, Wavice Inc. -
An Optical 0.25-μm GaN HEMT Technology on 100-mm SiC for RF Discrete and Foundry MMIC Products
Download PaperSimon M. WoodScott T. SheppardFabian Radulescu, Wolfspeed | A Cree CompanyDon A. GajewskiBill PribbleDonald FarrellUlf Andre Jeffrey B. Barner