Felix Kaess

  • Homoepitaxial GaN for vertical power and RF hybrid devices grown on production-scale MOCVD reactors

    Felix Kaess, IQE
    Oleg Laboutin, IQE
    Chen-Kai Kao, IQE
    Hugues Marchand, IQE

    Homoepitaxial GaN growth was implemented, studied, and improved in a production scale MOCVD reactor. The epitaxial GaN threading dislocation density was very close to that of the different free-standing GaN substrates and uniform across large diameters. We were able to limit incorporation of impurities to the low levels required for vertical electron drift layers by using appropriate growth process conditions. Different surface analysis studies revealed near-perfect step flow growth over large areas of the wafers.

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