Fikadu Alema
Agnitron Technology Incorporated, Chanhassen, MN 55317, USA
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May 02, 2019 // 3:40pm – 4:30pm
18.5 b-Ga2O3 and related alloys grown by MOCVD on a Multi-wafer production system
Nazar Orishchin, Agnitron Technology, IncFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA -
13.4 Advances toward industrial compatible epitaxial growth of β-Ga2O3 and alloys for power electronics
Ross Miller, Agnitron TechnologyFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA -
7.2.2023 Fabrication and Analysis of β-Ga2O3 Schottky Diodes with Drift Layer Grown by MOCVD on (001) Substrate
Prakash P. Sundaram, University of Minnesota, Minneapolis, MN 55455, USAFengdeng Liu, University of Minnesota, Minneapolis, MN 55455, USAFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USABharat Jalan, University of Minnesota, Minneapolis, MN 55455, USASteven J. Koester, University of Minnesota, Minneapolis, MN 55455, USA -
18.7.2023 Manufacturable processes and performance characteristics of few-layer hexagonal boron nitride-based templates on sapphire
Tim Vogt, Agnitron Technology, IncVitali Soukhoveev, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAFikadu Alema, Agnitron Technology Incorporated, Chanhassen, MN 55317, USAAndrei Osinsky, Agnitron Technology Incorporated, Chanhassen, MN 55317, USA