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Frédéric Allibert
SOITEC
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6.1.3.2024 SmartSiC™ 150 & 200mm engineered substrate: increasing SiC power device current density up to 30%
Eric Guiot, SOITECFrédéric Allibert, SOITECJürgen Leib, Fraunhofer IISBTom Becker, Fraunhofer IISBOleg Rusch, Fraunhofer IISBAlexis Drouin, SOITECWalter Schwarzenbach, SOITEC