Fritz Kub

Naval Research Laboratory
  • Formation of Diamond Superjunctions to Enable GaN-Based Super-Lattice Power Amplifiers with Diamond Enhanced Superjunctions (SPADES)

    Geoffrey Foster, ASEE Postdoctoral Fellow Residing at NRL
    Tatyana Feygelson, Naval Research Laboratory
    James Gallagher, ASEE Postdoctoral Fellow Residing at NRL
    Josephine Chang, Northrop Grumman
    Shamima Afroz, Northrop Grumman
    Ken Nagamatsu, Northrop Grumman
    Robert Howell, Northrop Grumman
    Karl Hobart, U.S. Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Andrew Koehler, U.S. Naval Research Laboratory

    The super-lattice power amplifier with diamond enhanced superjunctions (SPADES) is a device that incorporates nanocrystalline diamond superjunctions into the super-lattice castellated field effect transistor (SLCFET), to improve breakdown voltage. A diamond superjunction is formed with p-type nanocrystalline diamond to balance mutual depletion between the two-dimensional electron gas superlattices and the doped diamond in order to reduce the peak electric field in the drain access region.  Formation of the diamond superjunction presents several challenges, such as managing diamond conformality, strain, and control over p-type doping.  Optimization of diamond growth led to conformal films, with low stress, and linear dependence hole concentration from p-type doping, suitable for the SPADES device.

    Download Paper
  • 13.1 High Aspect Ratio Vias in Silicon Carbide Etched by Inductively-Coupled Plasma

    Marko Tadjer, Naval Research Laboratory
    Lunet Luna, U.S. Naval Research Laboratory
    Eugene Imhoff, Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Download Paper
  • 16.3 Evaluation of GaN Device Structures on 150 mm GaN on Engineered Substrates

    Karl Hobart, Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Anindya Nath, George Mason University
    Jennifer Hite, U.S. Naval Research Laboratory
    N. Mahadik, U.S. Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Ozgur Aktas, Qromis, Inc.
    Vladimir Odnoblyudov, QROMIS, Inc.
    Cem Basceri, QROMIS, Inc.
    Download Paper
  • 18.2 Engineering PECVD SiN Passivation Layers to Enable AlGaN/GaN HEMTs with Low Leakage, Low Current Collapse and High Breakdown Voltage

    Andrew Koehler, Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Marko Tadjer, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Download Paper
  • 20.5 Characterization of ALD High-k Dielectrics in GaN and Ga2O3 Metal-Oxide-Semiconductor Systems

    David Shahin, University of Maryland
    Travis Anderson, Naval Research Laboratory
    Virginia Wheeler, U.S. Naval Research Laboratory
    Marko Tadjer, Naval Research Laboratory
    Lunet Luna, U.S. Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Aris Christou, University of Maryland-College Park
    Download Paper
  • 5.3 Influence of Substrate Removal on the Electrothermal Characteristics of AlGaN/GaN Membrane High Electron Mobility Transistors

    Marko Tadjer, Naval Research Laboratory
    Peter Raad, TMX Scientific and Southern Methodist University
    Tatyana Feygelson, Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Bradford Pate, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Download Paper
  • 11.5 Optimization of AlGaN/GaN HEMT SiN Passivation by Mixed Frequency PECVD

    Marko Tadjer, Naval Research Laboratory
    Andrew Koehler, Naval Research Laboratory
    Charles Eddy, US Naval Research Laboratory
    Jr., Naval Research Laboratory
    Travis Anderson, Naval Research Laboratory
    Karl Hobart, Naval Research Laboratory
    Fritz Kub, Naval Research Laboratory
    Download Paper