This report describes the first demonstration of a 100nm T-gate for the Superlattice Castellation Field Effect Transistor (SLCFET) amplifier. The SLCFET amplifier device utilizes a superlattice of GaN/AlGaN channels, which enables a high charge density and low source resistance. A three-dimensional T-gate structure provides electrostatic control of the channels while maintaining high gain. Improvements to the T-gate process have allowed for the scaling of the gate down to 100nm while maintaining excellent gate control, with an on to off current ratio exceeding 107. This gate scaling allows the device to reach FT / FMAX of 70/110 GHz with full passivation to maintain compatibility with the productionized SLCFET switch process.
100nm, Three-dimensional T-Gate for SLCFET AmplifiersRobert Howell, Northrop Grumman CorporationAnnaliese Drechsler, Northrop Grumman (MS), Linthicum, MDKen Nagamatsu, Northrop Grumman CorporationKevin Frey, Northrop Grumman CorporationMonique Farrell, Northrop Grumman CorporationGeorges Siddiqi, HRL LaboratoriesM. Scimonelli, Northrop Grumman (MS), Linthicum, MDJordan Merkle, Northrop Grumman CorporationJosephine Chang, Northrop Grumman CorporationDownload Paper
May 10, 2022 // 5:10pm
4.4 Improving manufacturability of highly scaled RF GaN HEMTsGeorges Siddiqi, HRL LaboratoriesAndrea Corrion, HRL LaboratoriesDavid Fanning, HRL Laboratories, Malibu, CA,Michael Johnson, HRL LaboratoriesDan Denninghoff, HRL LaboratoriesJoseph Nedy, HRL LaboratoriesHannah Robinson, HRL LaboratoriesErdem Arkun, HRL Laboratories, Malibu, CA,Haidang Tran, HRL LaboratoriesQuang Lam, HRL LaboratoriesLuis Fortin, HRL LaboratoriesFlorian Herrault, HRL Laboratories