Georges Siddiqi

HRL Laboratories
  • 100nm, Three-dimensional T-Gate for SLCFET Amplifiers

    Robert Howell, Northrop Grumman Corporation
    Annaliese Drechsler, Northrop Grumman (MS), Linthicum, MD
    Ken Nagamatsu, Northrop Grumman Corporation
    Kevin Frey, Northrop Grumman Corporation
    Monique Farrell, Northrop Grumman Corporation
    Georges Siddiqi, HRL Laboratories
    M. Scimonelli, Northrop Grumman (MS), Linthicum, MD
    Jordan Merkle, Northrop Grumman Corporation
    Josephine Chang, Northrop Grumman Corporation

    This report describes the first demonstration of a 100nm T-gate for the Superlattice Castellation Field Effect Transistor (SLCFET) amplifier. The SLCFET amplifier device utilizes a superlattice of GaN/AlGaN channels, which enables a high charge density and low source resistance. A three-dimensional T-gate structure provides electrostatic control of the channels while maintaining high gain. Improvements to the T-gate process have allowed for the scaling of the gate down to 100nm while maintaining excellent gate control, with an on to off current ratio exceeding 107. This gate scaling allows the device to reach FT / FMAX of 70/110 GHz with full passivation to maintain compatibility with the productionized SLCFET switch process.

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  • May 10, 2022 // 5:10pm

    4.4 Improving manufacturability of highly scaled RF GaN HEMTs

    Georges Siddiqi, HRL Laboratories
    Andrea Corrion, HRL Laboratories
    David Fanning, HRL Laboratories, Malibu, CA,
    Michael Johnson, HRL Laboratories
    Dan Denninghoff, HRL Laboratories
    Joseph Nedy, HRL Laboratories
    Hannah Robinson, HRL Laboratories
    Erdem Arkun, HRL Laboratories, Malibu, CA,
    Haidang Tran, HRL Laboratories
    Quang Lam, HRL Laboratories
    Luis Fortin, HRL Laboratories
    Florian Herrault, HRL Laboratories
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