Abstract
This work presents β-Ga2O3 trench Schottky barrier diodes (TSBDs) with double drift layer structures, achieving a 34% lower on-resistance compared to conventional single drift layer structures, without compromising the off-state performance. The TSBDs exhibit a breakdown voltage of ~2.4 kV, after which the devices were observed to crack along the [010] crystallographic direction in β-Ga2O3. The mechanisms behind breakdown-induced cracking were investigated including using nanoindentation, which revealed that the cracking is due to relatively weak chemical bonding along the [010] direction.
H. Huang
University of Bristol
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8A.2 – kV-Class β-Ga2O3 Trench Schottky Barrier Diodes: Double Drift Layer Design and Breakdown Analysis
Sai Charan Vanjari, University of BristolA. K. Bhat, University of BristolH. Huang, University of BristolMatthew Smith, University of BristolJ. W. Pomeroy, University of Bristol, Bristol, UKM. Kuball, University of Bristol, Bristol, UK