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H. Liang
imec,
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8.1.2021 Demonstration of High-quality GaN Epitaxy on 200 mm Engineered Substrates for Vertical Power Device Fabrication
K. Geens, imec,H. Hahn, AIXTRON SEH. Liang, imec,M. Borga, imecD. Cingu, imecS. You, imecM. Marx, AIXTRON SER. Oligschlaeger, AIXTRON SED. Fahle, AIXTRON SEM. Heuken, AIXTRON SEV. Odnoblyudov, Qromis, inc.O. Aktas, Qromis, Inc.C. Basceri, Qromis, Inc.S. Decoutere, imecDownload Paper