Hirokuni Tokuda
University of Fukui
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4.3 Optimized Design of 3-Dimensional Field Plate in AlGaN/GaN HEMTs for Collapse-Free Operation
Download PaperAtsuya Suzuki, University of FukuiJoel Asubar, University of FukuiHirokuni Tokuda, University of FukuiMasaaki Kuzuhara, University of Fukui -
14.14 AlGaN/GaN MOS-HEMTs with Dual Field Plates for Stable High-Performance Operation
Download PaperRyota Yamaguchi, University of FukuiTaisei Yamazaki, University of FukuiTakashi Nishitani, University of FukuiJoel T. Asubar, University of FukuiHirokuni Tokuda, University of FukuiMasaaki Kuzuhara, University of Fukui -
8b.3 AlGaN/GaN HEMTs on Free-standing GaN Substrates with Breakdown Voltage of 5 kV and Effective Lateral Critical Field of 1 MV/cm
Download PaperJie Hong Ng, University of FukuiJoel Asubar, University of FukuiHirokuni Tokuda, University of FukuiMasaaki Kuzuhara, University of Fukui