Hiroshi Ohta

Osaka University
  • May 01, 2019 // 2:30pm – 2:50pm

    10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching

    Hiroshi Ohta, Osaka University
    Naomi Asai, Hosei University
    Takehiro Yoshida, Sciocs Company Limited
    Tomoyoshi Mishima, Osaka University
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  • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

    Fumimasa Horikiri, Sciocs Company Limited
    Yoshinobu Narita, Sciocs Company Limited
    Takehiro Yoshida, Sciocs Company Limited
    Toshio Kitamura, Sciocs Company Limited
    Yukio Abe, Sciocs Company Limited
    Hiroshi Ohta, Osaka University
    Tohru Nakamura, Hosei University
    Tomoyoshi Mishima, Osaka University
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  • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

    Fumimasa Horikiri, Sciocs Company Limited
    Yoshinobu Narita, Sciocs Company Limited
    Takehiro Yoshida, Sciocs Company Limited
    Hiroshi Ohta, Osaka University
    Tomoyoshi Mishima, Osaka University
    Tohru Nakamura, Hosei University
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  • May 12, 2022 // 10:40am

    14.1 Promising Results of National Project by Japanese Ministry of the Environment to Develop GaN on GaN Power Devices and Prove their Usefulness in Real Systems

    Yohei Otoki, SCIOCS
    Masatomo Shibata, SCIOCS
    Tomoyoshi Mishima, Osaka University
    Hiroshi Ohta, Osaka University
    Y. Mori, Osaka University
    Keiji Watanabe, Fujitsu Laboratories Ltd.
    Naoya Okamoto, Fujitsu Laboratories Ltd.
    Masayoshi Yamamoto, Nagoya University
    Koji Shiozaki, Nagoya University
    Satoshi Tamura, Panasonic Corporation
    Masayuki Imanishi, Osaka University
    Kazunori Kidera, Panasonic Corporation
    Junichi Takino, Panasonic Corporation
    Yoshio Okayama, Panasonic Corporation
    Yoshio Honda, Institute of Materials and Systems for Sustainability, Nagoya University
    Hiroshi Amano, Nagoya University
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