Hiroshi Ohta

Hosei University
  • May 01, 2019 // 2:30pm – 2:50pm

    10.3 Fabrication of Gallium Nitride Deep-Trench Structures by Photoelectrochemical Etching

    Hiroshi Ohta, Hosei University
    Naomi Asai, Hosei University
    Takehiro Yoshida, Sciocs Company Limited
    Tomoyoshi Mishima, Hosei University
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  • 4.1 A Wafer-Level Uniformity Improvement by the Substrate Off Angle Control for the Vertical GaN-on-GaN Power Switching Devices

    Fumimasa Horikiri, Sciocs Company Limited
    Yoshinobu Narita, Sciocs Company Limited
    Takehiro Yoshida, Sciocs Company Limited
    Toshio Kitamura, Sciocs Company Limited
    Yukio Abe, Sciocs Company Limited
    Hiroshi Ohta, Hosei University
    Tohru Nakamura, Hosei University
    Tomoyoshi Mishima, Hosei University
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  • 10b.3 Mechanism of Initial Failures in Breakdown Voltage of GaN-on-GaN Power Switching p-n Diodes

    Fumimasa Horikiri, Sciocs Company Limited
    Yoshinobu Narita, Sciocs Company Limited
    Takehiro Yoshida, Sciocs Company Limited
    Hiroshi Ohta, Hosei University
    Tomoyoshi Mishima, Hosei University
    Tohru Nakamura, Hosei University
    Download Paper