In order to meet the forecast growing demand of n+ SiC material, wafer suppliers will need to implement new metrology techniques to allow the detection of crystalline defects and ensure the quality of their materials. Incumbent techniques such as KOH etching have been used for many years but remain very costly as the wafers cannot be processed further. Alternative techniques such as X-ray Diffraction Imaging (X-ray Topography) can be used to detect crystalline defects non-destructively but studies have been limited to synchrotron radiation which cannot be used as an in-line characterization. In this paper, Bruker have used novel equipment (Sensus-CS) to study the correlation between laboratory X-ray Diffraction Imaging and KOH etching performed at the University of Warwick.
Correlation study between molten KOH etching and laboratory X-ray Diffraction Imaging (X-ray topography) in n+ 4H-SiC wafersDavid Jacques, Bruker UK LtdVishal Shah, University of WarwickRichard Bytheway, Bruker UK LtdTamzin Lafford, Bruker UK LtdBenjamin Renz, University of WarwickPeter Gammon, University of WarwickPaul Ryan, Bruker UK LtdHrishikesh Das, ON SemiconductorDownload Paper