Hsuan-Ling Kao

Chang Gung University,

5.6.2021 High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6- inch N-doped Low Resistivity SiC Substrate

Yu-Chun Huang, Chang Gung University,

Hsuan-Ling Kao, Chang Gung University,

Si-Wen Chen, Chang Gung University,
4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

Ming Chin Chen, Unikorn Semiconductor Corporation

Chia Cheng Liu, Unikorn Semiconductor Corporation

Vladimir Odnoblyudov, Qromis, Inc.

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8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design

Hsiang-Chun Wang, Chang Gung University

Hsien-Chin Chiu, Chang Gung University

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5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

Hsiang Chun Wang, Chang Gung University,

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14.8 High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer

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6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate

Chong-Rong Huang, Chang Gung University

Hsien-Chin Chiu, Chang Gung University

Chao-Wei Chiu, Chang Gung University

Hsuan-Ling Kao, Chang Gung University,

Yong-Xiang Zhuang, Chang Gung University

Yang-Ching Ho, Chang Gung University

Chen-Kang Chuang, Chang Gung University

Chih-Tien Chen, National Chung-Shan Institute of Science and Technology

Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology

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Hsuan-Ling Kao

5.6.2021 High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6- inch N-doped Low Resistivity SiC Substrate

4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design

5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

14.8 High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer

6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate