Hsuan-Ling Kao

Chang Gung University,

  • 5.6.2021 High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6- inch N-doped Low Resistivity SiC Substrate

    Yu-Chun Huang, Chang Gung University,
    Hsuan-Ling Kao, Chang Gung University,
    Si-Wen Chen, Chang Gung University,

  • 4.4.2021 Monolithically Integrated GaN Power and RF ICs on 150mm Poly-AlN for Envelope Tracking Power Amplifier Applications

    Ming Chin Chen, Unikorn Semiconductor Corporation
    Chia Cheng Liu, Unikorn Semiconductor Corporation
    Vladimir Odnoblyudov, Qromis, Inc.
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  • 8.4.2021 Low Off-State Leakage Current Normally Off p-GaN Gate HEMT Using the Al0.5Ga0.5N Etching Stop Layer Design

    Hsiang-Chun Wang, Chang Gung University
    Hsien-Chin Chiu, Chang Gung University
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  • 5.4.2021 Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

    Hsiang Chun Wang, Chang Gung University,
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  • 14.8 High Voltage Vertical GaN p–n Diode With N2O Sidewall Treatment on Free-standing GaN Wafer

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  • 6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaN/GaN HEMT using bufferfree structure on 6” SiC substrate

    Chong-Rong Huang, Chang Gung University
    Hsien-Chin Chiu, Chang Gung University
    Chao-Wei Chiu, Chang Gung University
    Hsuan-Ling Kao, Chang Gung University,
    Yong-Xiang Zhuang, Chang Gung University
    Yang-Ching Ho, Chang Gung University
    Chen-Kang Chuang, Chang Gung University
    Chih-Tien Chen, National Chung-Shan Institute of Science and Technology
    Kuo-Jen Chang, National Chung-Shan Institute of Science and Technology

    6.1.4.2024 Thermally stable Normally-off 1200 V Cascoded AlGaNGaN HEMT

  • 4A.4 – High Power Added Efficiency Enhancement-Mode -Gate RF HEMT with Engineered Mg Doping Profile in p-GaN Layer

    Hsien-Chin Chiu, Chang Gung University
    Chong-Rong Huang, Chang Gung University
    C. -W. Chiu, Chang Gung University
    C. -H. Lin, Chang Gung University
    C. -H. Yu, Chang Gung University
    Hsuan-Ling Kao, Chang Gung University,
    B. Lin, Wavetek Microelectronics Corporation

    4A.4 Final.2025

    Abstract
    E-mode p-GaN -gate RF HEMT with engineered Mg doping profile was developed and demonstrated for high power amplifier application. Through the design of a low-temperature MOCVD Mg doping profile and a reduction in Mg doping concentration, the diffusion of Mg into AlGaN is minimized compared to traditionally high Mg-doping grown p-GaN. This design enhances the gate modulation capability of p-GaN for RF applications, resulting in a higher gm peak. In addition, the Poole–Frenkel (PF) tunneling induced flicker noise was also suppressed at high input power swing due to low inactivated Mg induced traps. With the engineered Mg-doping profile design, a 61.4 % PAE was achieved together with an output power density close to 1 W/mm at VDS of 10 V which exhibit a highly potential for satellite direct-to-cell and FR3 mobile phone single voltage supply PA applications.