Huaxing Jiang
Hong Kong University of Science and Technology
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20.9 Low Leakage High Breakdown GaN MOSHEMTs on Si with a ZrO2 Gate Dielectric
Huaxing Jiang, Hong Kong University of Science and TechnologyChao Liu, Hong Kong University of Science and TechnologyYuying Chen, Hong Kong University of Science and TechnologyChak Wah Tang, Hong Kong University of Science and TechnologyKei May Lau, Hong Kong University of Science and Technology -
11.1 Suppression of Current Collapse in AlGaN/GaN MISHEMTs using in-situ SiN Gate Dielectric and PECVD SiN Passivation
Huaxing Jiang, Hong Kong University of Science and TechnologyChao Liu, Hong Kong University of Science and TechnologyXing Lu, Hong Kong University of Science and TechnologyKei May Lau, Hong Kong University of Science and Technology -
11.3 Investigation of the Interface Traps and Current Collapse in LPCVD SiNx/AlGaN/GaN MISHEMTs
Kun Yu, Xi’an Jiaotong UniversityChao Liu, Hong Kong University of Science and TechnologyHuaxing Jiang, Hong Kong University of Science and TechnologyXing Lu, Hong Kong University of Science and TechnologyKei May Lau, Hong Kong University of Science and TechnologyAnping Zhang, Xi'an Jiaotong University