Hudong Chang

Institute of Microelectronics, Chinese Academy of Sciences
  • 5.2 High Performance InGaAs MOSFETs with an InGaP Interface Control Layer and ALD-Al2O3 Gate Oxide for RF Switch Applications

    Qingzhen Xia, Institute of Microelectronics, Chinese Academy of Sciences
    Kailiang Huang, Institute of Microelectronics, Chinese Academy of Sciences
    Hudong Chang, Institute of Microelectronics, Chinese Academy of Sciences
    Shengkai Wang, Institute of Microelectronics, Chinese Academy of Sciences
    Bing Sun, Institute of Microelectronics, Chinese Academy of Sciences
    Honggang Liu, Institute of Microelectronics, Chinese Academy of Sciences
    Download Paper