Hyeyoung Jung

Wavice Inc.,
  • 5.1.2022 Performance of 0.3 um gate length GaN HEMT by using i-line stepper for high power c-band applications

    Sangmin Lee, Wavice Inc.,
    Byoungchul Jun, Wavice Inc.,
    Chulsoon Choi, Wavice Inc.,
    Hyeyoung Jung, Wavice Inc.,
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  • 4.3.2023 GaN based 2-stage Wide Band Doherty PA for 3.4-3.8 GHz Using Hybrid Integration with IPDs on HPSI SiC Substrate

    Sangmin Lee, Wavice Inc.: Now with Global Communication Semiconductors LLC, Torrance, CA
    Jinman Jin, Wavice Inc.
    Inseop Kim, Wavice Inc.,
    Hyeyoung Jung, Wavice Inc.,
    Seo Koo, Soonchunhyang University, Korea
    Dal Ahn, Soonchunhyang University, Korea

    4.3.2023 CS_MANTECH_2023_Sangmin_Lee_Wavice_paper_4.3