A novel long wavelength 1550 nm VCSEL structure is introduced utilizing an InP-based substrate and bottom DBR mirror, a dielectric silicon/silicon dioxide top DBR mirror, and a tunable phase-matching layer fabricated from a piezo-electric/electro-optic material. By applying a voltage bias across this phase-matching layer, the layer’s optical thickness can be altered, thereby shifting the overlap of the electric-field standing-wave pattern with
the gain region. When process variation/nonuniformity negatively impact the device performance, mainly threshold current and threshold modal gain, tuning of the
phase matching layer can optimize the standing wave overlap with the gain region, minimizing threshold current and modal gain. This work presents the novel
epitaxial structure designed and explores the viability of various materials for application as the phase-matching layer via simulation results utilizing the transfer-matrix method.
J. Flanagan
University of Illinois Urbana-Champagne
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6B.2 – Design of Novel Long-Wavelength VCSEL Structure with Voltage- Controllable Phase-Matching Layer for Standing Wave Tuning
Kevin P. Pikul, University of Illinois Urbana-ChampagneLeah Espenhahn, University of Illinois at Urbana-ChampaignJ. Flanagan, University of Illinois Urbana-ChampagneE. Becher, University of Illinois at Urbana-ChampaignJ.M. Dallesasse, University of Illinois at Urbana-Champaign