J. Simon

CEA LETI, Minatec, Univ. Grenoble Alpes

  • 12.6 – Off-Axis Sputtering Fabrication of ITO Contact Layers for pGaN

    l. E. Nistor, Applied Materials
    N. Coudurier, CEA LETI, Minatec, Univ. Grenoble Alpes
    A. Lardeau-Falcy, CEA LETI, Minatec, Univ. Grenoble Alpes
    J. Simon, CEA LETI, Minatec, Univ. Grenoble Alpes
    S. Altazin, CEA LETI, Minatec, Univ. Grenoble Alpes
    S. Poncet, CEA LETI, Minatec, Univ. Grenoble Alpes
    V. Chambinaud, CEA LETI, Minatec, Univ. Grenoble Alpes
    B. Dey, CEA LETI, Minatec, Univ. Grenoble Alpes
    J. Machillot, Applied Materials
    H. Boukhalfa, Applied Materials
    G. Rodriguez, CEA LETI, Minatec, Univ. Grenoble Alpes

    12.6 Final.2025

    This paper presents Indium Tin Oxide (ITO) films developed using a pulsed DC off-axis sputtering chamber on 300mm substrates to obtain transparent-ohmic contact for pGaN. Film optoelectrical and microstructure properties were investigated per comparison for different deposition techniques such as single ITO target, alloy by co-deposition from two targets (In2O3 and SnO2) and for stacks including different interfacial layers, such as In-rich ITO and Ni. A ranking of the specific contact resistivity of all the films was determined after integration on Transmission Line Method (TLM) devices. A correlation of the specific contact resistivity with film first layer’s texture dependent on film process, thickness and material was observed.