Jae-Hyuck Yoo

Lawrence Livermore National Laboratory, Livermore, CA
  • May 12, 2022 // 3:20pm

    18.19 Reliability Study of Vertical GaN PIN Rectifiers and The Origin of Premature Breakdown

    Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
    Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
    Theeradetch Detchphrom, Georgia Institute of Technology, Atlanta, GA
    Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
    Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
    Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
    Ted Laurence, 2Lawrence Livermore National Laboratory, Livermore, CA
    Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
    Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
    Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA

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  • 8.5.2021 A Study of Wafer-Scale Breakdown Characteristics of Vertical GaN PIN Rectifiers

    Minkyu Cho, Georgia Institute of Technology, Atlanta, GA
    Matthias Daeumer, Lawrence Livermore National Laboratory, Livermore, CA
    Jae-Hyuck Yoo, Lawrence Livermore National Laboratory, Livermore, CA
    Marzieh Bakhtiary Noodeh, Georgia Institute of Technology, Atlanta, GA
    Qinghui Shao, 2Lawrence Livermore National Laboratory, Livermore, CA
    Zhiyu Xu, Georgia Institute of Technology, Atlanta, GA
    Theeradetch Detchprohm, Georgia Tech
    Russell D. Dupuis, Georgia Institute of Technology, Atlanta, GA
    Shyh-Chiang Shen, Georgia Institute of Technology, Atlanta, GA
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