We report the dispersion characteristics of ScAlN/GaN high-electron-mobility transistors (HEMTs) with various epitaxial designs. Devices were fabricated on both ternary (ScAlN) and quaternary (ScAlGaN) materials. The effects of a GaN capping layer was also investigated. We report similar DC and RF performance for all wafers, but significantly worse dispersion which occurs on the quaternary samples. We observe a total gate and drain lag for the ScAlN wafer to be 49% while the ScAlGaN with and without the GaN cap had 10 and 12% dispersion, respectively.
Air Force Research Laboratory
Dispersion Characteristics of ScAlN and ScAlGaN HEMTs by Pulsed I-V MeasurementsKelson Chabak, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USACathy Lee, Qorvo Inc.Yu Cao, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQEAndy Xie, QorvoEdward Beam, QORVOAntonio Crespo, AFRLDennis Walker, Air Force Research Laboratory Sensors Directorate, WPAFB, OH, USARobert Fitch, AFRLJames Gillespie, Air Force Research LaboratoryAndrew Green, Air Force Research LaboratoryDownload Paper
3.1 Demonstration of X-band T/R MMIC using AFRL AlGaN/GaN MMIC ProcessJames Gillespie, Air Force Research LaboratoryKelson Chabak, Air Force Research LaboratoryAntonio Crespo, AFRLRobert Fitch, AFRLDarren Ferwalt, Cobham Advanced Electronic SystemsDavid Frey, Cobham Advanced Electronic SystemsJeremy Gassmann, Cobham Advanced Electronic SystemsMark Walker, Cobham Advanced Electronic SolutionsRyan Gilbert, Wyle LaboratoriesDennis Walker Jr, Air Force Research Laboatory, Sensors DirectorateGlen Via, AFRLA.J. GreenK.D. LeedyR.K. MongiaB.S. PolingK.A. SutherlinS.E. TetlakJ.P. TheimerG.H. Jessen