James McClymonds

  • Performance and Reliability of GaN MISHEMTs and MMICs Fabricated From GaN Grown on High Resistance Si Substrates by Molecular Beam Epitaxy

    Jeffrey LaRoche, Raytheon IDS Microelectronics, Novati Technologies, Inc. IQE
    William Hoke
    David Altman
    James McClymonds
    Paul Alcorn
    Kurt Smith
    Eduardo Chumbes
    Jeff Letaw
    Download Paper